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      The P-N junction diode is appeared in the year 1950. It is the most essential and the basic building block of the electronic device. The PN junction diode is a two terminal device, which is formed when one side of the PN junction diode is made with p-type and doped with the N-type material. The PN-junction is the root for semiconductor diodes. The various electronic components like BJTs, JFETs, MOSFETs ( metal–oxide–semiconductor FET ), LEDs and analog or digital ICs all supports semiconductor technology. The main function of the semiconductor diode is, it facilitates the electrons to flow totally in one direction across it. Finally, it acts as a rectifier. This article gives a brief information about the PN junction diode, PN junction diode in forward bias and reverse bias and the VI characteristics of PN junction diode What is a PN Junction Diode? There are three possible  biasing  conditions and two operating regions for the typical PN-Junctio...

Composition Photomicrograph of two metal-gate MOSFETs in a test pattern. Probe pads for two gates and three source/drain nodes are labeled. Usually the semiconductor of choice is silicon, but some chip manufacturers, most notably IBM, recently started using a chemical compound (bond, NOT a mixture) of silicon and germanium (SiGe) in MOSFET channels. Unfortunately, many semiconductors with better electrical properties than silicon, such asgallium arsenide, do not form good semiconductor-to-insulator interfaces, thus are not suitable for MOSFETs. Research continues on creating insulators with acceptable electrical characteristics on other semiconductor material. In order to overcome power consumption increase due to gate current leakage, high-κ dielectric replaces silicon dioxide for the gate insulator, while metal gates return by replacing polysilicon (see Intel announcement [1] ). The gate is separated from the channel by a thi...