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FAST RECOVERY DIODES Fast recovery diodes are designed to provide ultra high switching speed. They are mainly classified into two :- Diffused PN Junction Diodes Metal Semiconductor Diodes The total recovery time for a P-N Junction diode can be substantially reduced by introducing efficient recombination centers, such as Au and Si, to the bulk material. Although the recovery time is directly proportional to the lifetime, it is not possible to reduce recovery time to Zero by introducing an extremely large number of recombination centers, because the reverse generation current of a P-N junction is proportional to recombination centers. For direct band gap Semiconductors, such as GaAs, the minority carrier lifetimes are much smaller than that of silicon. This results in ultrahigh speed GaAs P-N junction diodes with recovery times of the order of 0.1ns or less.

This is a simple Batteries charger for NiMH/NiCd.It Requires No Microcontroller or any Firmware .Linear Technology Corporation introduces the LTC4060, an autonomous 1- to 4-cell, 0.4A to 2A linear NiMH and NiCd battery charger. The LTC4060 includes all the functions required for a battery charger circuit, operating without the aid of a microcontroller or firmware. The design is simple and needs only three passive components. The LTC4060 also eliminates the need for a sense resistor and blocking diode, which increases efficiency and lowers the solution cost. This IC is targeted at applications including portable medical equipment , automotive diagnostic systems and industrial/telecom test devices. Features Complete Fast Charger Controller for Single, 2-, 3- or 4-Series Cell NiMH/ NiCd Batteries No Firmware or Microcontroller Required Termination by –?V, Maximum Voltage or Maximum Time No Sense Resistor or Blocking Diode Required Automatic Recharge Keeps Batteries Charged Programmabl...