Nano-electronics research center imec announced today at Intersolar Europe, a new efficiency record for its large area n-type PERT (passivated emitter, rear totally diffused) crystalline silicon (Cz-Si) solar cell, now reaching 22.5 percent (calibrated at ISE CalLab). It is the highest efficiency achieved for a two-side-contacted solar cell processed on six inch commercially available n-type Cz-Si wafers without the use of passivated contacts. N-type silicon solar cells are considered as promising alternatives to p-type solar cells for next generation highly efficient solar cells thanks to their ability to withstand light-induced degradation and to their higher tolerance to common metal impurities. [ ]